features: pin compatible with mpm3004 p and n channel mosfets for ease of drive isolated package for direct heat sinking, excellent thermal conductivity avalanche rated devices 55 volt, 10 amp full h-bridge m.s.kennedy corp. h-bridge mosfet power module stepper motor servo control disk drive head control x-y table control az-el antenna control typical applications pin-out information 1 2 3 4 5 6 n/c drain 1,2 gate 1 source 1 gate 2 source 2 source 4 n/c drain 3,4 gate 4 gate 3 source 3 12 11 10 9 8 7 3004 the msk3004 is an h-bridge power circuit packaged in a space efficient isolated ceramic tab power sip package. the msk3004 consists of p-channel mosfets for the top transistors and n-channel mosfets for the bottom transistors. the msk3004 uses m.s.kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. the msk3004 is a replacement for the mpm3004 with only minor differences in mechanical specifications. description: equivalent schematic 1 mil-prf-38534 and 38535 certified facility 8548-144 rev. j 11/14
drain-source breakdown voltage gate-source leakage current n-channel (q1,q4) total gate charge gate-source charge gate-drain charge turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse transfer capacitance p-channel (q2,q3) total gate charge gate-source charge gate-drain charge turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse transfer capacitance body diode absolute maximum ratings v gs =0 i d =0.25ma (all transistors) v ds =55v v gs =0v (q1,q4) v ds =-55v v gs =0v (q2,q3) v gs =20v v ds =0 (all transistors) v ds =v gs i d =250 a (q1,q4) v ds =v gs i d =250 a (q2,q3) v gs =10v i d =10a (q1,q4) v gs =-10v i d =-7.2a (q2,q3) v gs =10v i d =10a (q1,q4) v gs =10v i d =-7.2a (q2,q3) v ds =25v i d =10a (q1,q4) v ds =-25v i d =-7.2a (q2,q3) i d =10a v ds =44v v gs =10v v dd =28v i d =10a r g =24 r d =2.6 v gs =0v v ds =25v f=1mhz i d =-7.2a v ds =-44v v gs =-10v v dd =-28v i d =-7.2a r g =24 r d =3.7 v gs =0v v ds =-25v f=1mhz i s =10a v gs =0v (q1,q4) i s =-7.2a v gs =0v (q2,q3) i s =10a di/dt=100a/ s (q1,q4) i s =-7.2a di/dt=100a/ s (q2,q3) i s =10a di/dt=100a/ s (q1,q4) i s =-7.2a di/dt=100a/ s (q2,q3) parameter units msk3004 test conditions v a a na v v s s nc nc nc ns ns ns ns pf pf pf nc nc nc ns ns ns ns pf pf pf v v ns ns c c min. 55 - - - 2.0 -2.0 - - - - 4.5 2.5 - - - - - - - - - - - - - - - - - - - - - - - - - - typ. - - - - - - - - - - - - - - - 4.9 34 19 27 370 140 65 - - - 13 55 23 37 350 170 92 1.3 -1.6 56 47 0.12 0.084 max. - 25 -25 100 4.5 -4.5 0.15 0.28 0.07 0.175 - - 20 5.3 7.6 - - - - - - - 19 5.1 10 - - - - - - - - - 83 71 0.18 0.13 electrical specifications drain-source leakage current gate-source threshold voltage drain-source on resistance drain-source on resistance forward transconductance forward on voltage reverse recovery time reverse recovery charge 2 1 3 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 3 4 5 notes: this parameter is guaranteed by design but need not be tested. typical parameters are representative of actual device performan ce but are for reference only. resistance as seen at package pins. resistance for die only; use for thermal calculations. t a =25c unless otherwise specified. internal solder reflow temperature is 180c, do not exceed. 4 2 drain to source voltage drain to gate voltage (rgs=1m ) gate to source voltage (continuous) continuous current pulsed current single pulse avalanche energy (q1,q4) (q2,q3) junctiontemperature storage temperature case operating temperature range lead temperature range (10 seconds lead only) thermal resistance (junction to case) p-channel @ 25c p-channel @ 125c n-channel @ 25c n-channel @ 125c t j t st t c t ld r th-jc +175c max -55c to +150c -55c to +125c 200c max 9.7c/w 14.5c/w 9.7c/w 14.5c/w v dss v dgdr v gs i d i dm 55v max 55v max 20v max 10a max 25a max 71mj 96mj 5 8548-144 rev. j 11/14
application notes n-channel gates (q1,q4) for driving the n-channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a suff icient voltage to get the channel fully on. driving the gates to +15 volts with respect to their sources assures that the transistors are on. this will keep the dissipation down to a minimum level [r ds(on) specified in the data sheet]. how quickly the gate gets turned on and off will determine the dissipation of the transistor while it is transitioning from off to on, and vice-versa. turning the gate on and off too slow will cause excessive dissipation, while turning it on and off too fast will cause excessive switching noise in the system. it is important to have as low a driving impedance as practical for the size of the transistor. many motor drive ic's h ave sufficient gate drive capability for the msk3004. if not, paralleled cmos standard gates will usually be sufficient. a series r esistor in the gate circuit slows it down, but also suppresses any ringing caused by stray inductances in the mosfet circuit. the selectio n of the resistor is determined by how fast the mosfet wants to be switched. see figure 1 for circuit details. p-channel gates (q2,q3) most everything applies to driving the p-channel gates as the n-channel gates. the only difference is that the p-channel gat e to source voltage needs to be negative. most motor drive ic's are set up with an open collector or drain output for directly inter facing with the p-channel gates. if not, an external common emitter switching transistor configuration (see figure 2) will turn the p- channel mosfet on. all the other rules of mosfet gate drive apply here. for high supply voltages, additional circuitry must be used to protect the p-channel gate from excessive voltages. bridge drive considerations it is important that the logic used to turn on and off the various transistors allow sufficient "dead time" between a high s ide transistor and its low side transistor to make sure that at no time are they both on. when they are, this is called "shoot-thro ugh", and it places a momentary short across the power supply. this overly stresses the transistors and causes excessive noise as well. s ee figure 3. figure 1 figure 2 figure 3 this deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate resistors. this situation will be present when switching motor direction, or when sophisticated timing schemes are used for ser vo systems such as locked antiphase pwm'ing for high bandwidth operation. 3 8548-144 rev. j 11/14
typical performance curves 4 8548-144 rev. j 11/14
mechanical specifications part number msk3004 industrial screening level ordering information 5 torque specification 3 to 5 in/lbs. teflon screws or washers are recommended. all dimensions are specified in inches weight= 3.4 grams typical 8548-144 rev. j 11/14
the information contained herein is believed to be accurate at the time of printing. msk reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products. m.s. kennedy corp. phone (315) 701-6751 fax (315) 701-6752 www.mskennedy.com 6 revision history 8548-144 rev. j 11/14
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